کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148890 | 1524346 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
P-type single-crystalline ZnO films obtained by (Na,N) dual implantation through dynamic annealing process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Single-crystalline ZnO films were grown by plasma-assisted molecular beam epitaxy technique on c-plane sapphire substrates. The films have been implanted with fixed fluence of 130â¯keV Na and 90â¯keV N ions at 460â¯Â°C. It is observed that dually-implanted single crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 1.24â¯Ãâ¯1016-1.34â¯Ãâ¯1017â¯cmâ3, hole mobilities between 0.65 and 8.37â¯cm2â¯Vâ1â¯sâ1, and resistivities in the range of 53.3-80.7â¯Î©â¯cm by Hall-effect measurements. There are no other secondary phase appearing, with (0â¯0â¯2) (c-plane) orientation after ion implantation as identified by the X-ray diffraction pattern. It is obtained that Na and N ions were successfully implanted and activated as acceptors measured by XPS and SIMS results. Also compared to other similar studies, lower amount of Na and N ions make p-type characteristics excellent as others deposited by traditional techniques. It is concluded that Na and N ion implantation and dynamic annealing are essential in forming p-type single-crystalline ZnO films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 483, 1 February 2018, Pages 236-240
Journal: Journal of Crystal Growth - Volume 483, 1 February 2018, Pages 236-240
نویسندگان
Zhiyuan Zhang, Jingyun Huang, Shanshan Chen, Xinhua Pan, Lingxiang Chen, Zhizhen Ye,