Novel nitrogen/gallium precursor [Ga(bdma)H2] for MOVPE

Dilute nitrogen (N) containing III/V semiconductors are promising candidates for solar cell and laser applications. The N incorporation efficiency of 1,1-dimethylhydrazine (UMDHy) in metal organic vapor phase epitaxy (MOVPE), however, happens to be only in the one percentage range and below. This leads to an extremely high offer of UDMHy in the MOVPE reactor and, therefore, a drastic change in the growth conditions. Furthermore, the device efficiency of dilute nitride materials is currently hampered by carbon (C) incorporation, which is believed to be incorporated either jointly with the N from the dimethylamine radical of the UMDHy or from short hydrocarbon radicals originating from the decomposition of the other metal organics. Therefore, this work presents a novel N precursor N,N'-Bis(dimethylamino)acetamidinato-galliumdihydride [Ga(bdma)H2], which provides not only N but also gallium (Ga) during MOVPE. The direct N-Ga bond in this molecule might facilitate the N incorporation and hence increase the efficiency. For a systematic N incorporation study Ga(NAs)/GaAs heterostructures were grown by MOVPE. The N content was determined via high resolution X-ray diffraction and photoluminescence (PL) studies. Good structural quality and as grown room temperature PL were obtained. It will be also shown that the N incorporation efficiency in GaAs using [Ga(bdma)H2] is significantly higher than for growths using UDMHy under comparable conditions, making this class of molecules promising candidates for the growth of dilute nitride materials.