کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149259 | 1524375 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Liquid immiscibility in a CTGS (Ca3TaGa3Si2O14) melt
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Although many studies have indicated that Ca3TaGa3Si2O14 (CTGS) grows congruently from a stoichiometric melt when using the Czochralski (Cz) technique, the occurrence of a secondary phase during growth when using the micro-pulling down (μ-PD) technique has been reported. We have examined the detailed growth mechanism of μ-PD grown CTGS as well as its congruency. Differential thermal analysis (DTA) at an elevated temperature up to 1650 °C shows no peaks associated with the presence of a secondary phase, whereas a secondary phase related peak was detected at an elevated temperature up to 1490 °C with the same heating rate. Back-scattered electron images (BEIs) revealed the occurrence of Ca3Ta2Ga4O14 (CTG) as a secondary phase. The secondary phase appears at the very early stage of growth, which is not possible to explain by a eutectic reaction. The experimental results suggest that liquid immiscibility was present in the melt at around 1490 °C during the growth of s-CTGS. Liquid immiscibility produces Si-rich and Si-poor melts, from which different phases with different compositions are solidified. The μ-PD technique poses a more static environment in the melt than that of Cz technique due to low melt convection and the lack of stirring, which enables liquid immiscibility to emerge.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 454, 15 November 2016, Pages 82-86
Journal: Journal of Crystal Growth - Volume 454, 15 November 2016, Pages 82-86
نویسندگان
Jun Nozawa, Hengyu Zhao, Chihiro Koyama, Kensaku Maeda, Kozo Fujiwara, Haruhiko Koizumi, Satoshi Uda,