کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149306 | 1524379 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Rapid synthesis of transition metal dichalcogenide few-layer thin crystals by the microwave-induced-plasma assisted method
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Few-layer thin crystals of WS2, MoS2, WSe2, MoSe2 and ReS2 were synthesized via the microwave-induced-plasma-assisted method. The synthesis was accomplished in plasma that was formed inside sealed quartz ampoules heated by plasma surrounding the sealed ampoule. Powder X-ray diffraction, Raman spectroscopy and Transmission Electron Microscopy indicate thin crystals of high-quality. The proposed method is rapid, reproducible and environmentally friendly. It is applicable to practically every direct reaction between metals and nonmetals if the nonmetal vapor pressure can reach a pressure of a few torr, which is required for plasma formation inside a sealed ampoule.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 450, 15 September 2016, Pages 140-147
Journal: Journal of Crystal Growth - Volume 450, 15 September 2016, Pages 140-147
نویسندگان
Apoorva Chaturvedi, Adam Slabon, Peng Hu, Shuanglong Feng, Ke-ke Zhang, Rajiv Ramanujam Prabhakar, Christian Kloc,