کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149546 | 1524397 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Control of the crystal structure and electrical transport in undoped PbTe films grown by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Control of the crystal structure and electrical transport in undoped PbTe films grown by pulsed laser deposition Control of the crystal structure and electrical transport in undoped PbTe films grown by pulsed laser deposition](/preview/png/8149546.png)
چکیده انگلیسی
Lead telluride (PbTe) undoped films with various thicknesses (40-1800 nm) were grown by pulsed laser deposition (PLD) on different single crystal substrates (KCl, Si) and at different substrate temperatures (30 °C, 200 °C). Structural and electrical investigations of the so-obtained films have been carried out. The growth conditions leading to the films having different properties that could be controlled in a possibly wide range were identified. The film crystal structure varied from pseudo-amorphous to a highly ordered one. The films exhibited semiconducting behavior except the case of the thinnest, metallic-like layers. Electrical transport properties of the films with different structural quality were affected by changes of the grain boundary-related potential barrier height whereas donor level-related activation energies remained unchanged.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 432, 15 December 2015, Pages 19-23
Journal: Journal of Crystal Growth - Volume 432, 15 December 2015, Pages 19-23
نویسندگان
I.S. Virt, Y. Tur, I.O. Rudyi, I.Ye. Lopatynskyi, M.S. Frugynskyi, I.V. Kurilo, E. Lusakowska, B.S. Witkowski, G. Luka,