کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149547 | 1524397 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Double acceptor in p-type GaAsN grown by chemical beam epitaxy
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Double acceptor in p-type GaAsN grown by chemical beam epitaxy Double acceptor in p-type GaAsN grown by chemical beam epitaxy](/preview/png/8149547.png)
چکیده انگلیسی
The properties of the acceptor states in GaAsN grown by chemical beam epitaxy (CBE) are studied by analyzing their charges based on the Poole-Frenkel model. Deep level transient spectroscopy (DLTS) shows two acceptor levels at 0.11 and 0.19 eV above the valence band maximum. The emission rates of carriers from these states are enhanced with increasing the electric field during the DLTS measurement, which indicates that the energies required for the emission are decreased. By analyzing this field-enhanced emission process, the polarizabilities of the levels at 0.11 and 0.19 eV are found to be â1 (±0.1) and â2 (±0.1), respectively. In addition, these states have almost the same concentration. Therefore, we conclude that they originate from the same defect, acting as a double acceptor in GaAsN film grown by CBE.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 432, 15 December 2015, Pages 45-48
Journal: Journal of Crystal Growth - Volume 432, 15 December 2015, Pages 45-48
نویسندگان
Omar Elleuch, Li Wang, Kan-Hua Lee, Kazuma Ikeda, Nobuaki Kojima, Yoshio Ohshita, Masafumi Yamaguchi,