High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity

Self-assembled InAs quantum dots (QDs) were grown by solid source molecular beam epitaxy. The impact of the growth parameters like the growth temperature of the InGaAlAs nucleation layer, V/III ratio and growth rate during growth of QD layers were carefully investigated by using atomic force microscopy and photoluminescence spectroscopy. The excellent size uniformity of InAs QDs grown on InP substrates are verified by narrow photoluminescence line widths of 17 meV for single QD layers and 26 meV for stacked QD layers, respectivaly. Both values measured at 10 K.