کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149958 | 1524409 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular beam epitaxy and characterizations of PbTe grown on GaAs(211) substrates using CdTe/ZnTe buffers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Narrow-gap semiconductor PbTe has exhibited versatility in both mid-infrared optoelelctronics and thermoelectrics. However, the absence of commercially obtainable PbTe crystal substrates limits its wide applications. In this paper, heteroepitaxy of high-quality PbTe crystal on GaAs(211) using CdTe/ZnTe buffers by molecular beam epitaxy is presented for the first time. Optimal growth parameters have been obtained by both in-situ and ex-situ characterizations. In-situ reflection high-energy electron diffraction observed a transition of growth mode from 2D to 3D, which is in agreement with the results of atomic force microscope and scanning electron microscope characterizations. High resolution X-ray diffraction revealed that the growth of PbTe crystal is along [531] direction which is different from the [211] substrate orientation. Multiple phonon modes related to PbTe were observed by Raman scattering while mid-infrared light emission from epitaxial PbTe is observed at a peak of 3.5 μm by photoluminescence. Different from PbTe grown on BaF2(111), n-type conductivity with electron densities of ~5Ã1017 cmâ3 and mobilities of 675 cm2/V s at room temperature and 4300 cm2/V s at 2 K is observed. The high quality PbTe grown on GaAs(211) substrates using CdTe/ZnTe buffers renders promising applications in both optoelectronics and thermoelectrics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 420, 15 June 2015, Pages 17-21
Journal: Journal of Crystal Growth - Volume 420, 15 June 2015, Pages 17-21
نویسندگان
Tianyu Shu, Pengqi Lu, Bingpo Zhang, Miao Wang, Lu Chen, Xiangliang Fu, Gangyi Xu, Huizhen Wu,