کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8149979 1524409 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Metal organic vapor phase epitaxy of hexagonal Ge-Sb-Te (GST)
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Metal organic vapor phase epitaxy of hexagonal Ge-Sb-Te (GST)
چکیده انگلیسی
Epitaxial, hexagonal Ge-Sb-Te was grown on Si(111) substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) using the precursor digermane. The effect of reactor pressure, growth temperature and in situ pre-treatment on morphology and Ge-Sb-Te composition was studied. The composition is sensitive to reactor pressure and growth temperature. Compositional control is achieved at a reactor pressure of 50hPa. Substrate pre-treatment affects film coalescence. The use of hydrogen and a suitable precursor pre-treatment leads to enhanced surface coverage. X-ray diffraction reveals a trigonal structure with lattice parameters close to that reported for Ge1Sb2Te4 crystallizing in the R3¯m phase. The composition was confirmed by energy-dispersive X-ray spectroscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 420, 15 June 2015, Pages 37-41
نویسندگان
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