کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149979 | 1524409 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Metal organic vapor phase epitaxy of hexagonal Ge-Sb-Te (GST)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
Epitaxial, hexagonal Ge-Sb-Te was grown on Si(111) substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) using the precursor digermane. The effect of reactor pressure, growth temperature and in situ pre-treatment on morphology and Ge-Sb-Te composition was studied. The composition is sensitive to reactor pressure and growth temperature. Compositional control is achieved at a reactor pressure of 50hPa. Substrate pre-treatment affects film coalescence. The use of hydrogen and a suitable precursor pre-treatment leads to enhanced surface coverage. X-ray diffraction reveals a trigonal structure with lattice parameters close to that reported for Ge1Sb2Te4 crystallizing in the R3¯m phase. The composition was confirmed by energy-dispersive X-ray spectroscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 420, 15 June 2015, Pages 37-41
Journal: Journal of Crystal Growth - Volume 420, 15 June 2015, Pages 37-41
نویسندگان
Martin Schuck, Sally RieÃ, Marcel Schreiber, Gregor Mussler, Detlev Grützmacher, Hilde Hardtdegen,