کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8150629 | 1524421 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of different migration energy for reaction atoms on growth orientation and optical absorption characteristics of cubic MgZnO thin films under different pressure by PLD method
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Mg1âxZnxO thin films were deposited under different pressures during the growth process, which is modulated by different Ar/O2 flow ratio. When growth pressure increases, the growth orientation of MgZnO thin film changed from (200) to (111) because of the decrease in migration energy of reactive Mg, Zn and O atoms from MgZnO target material. The band gap of MgZnO thin films decreased when growth pressure increased from 2Â Pa to 6Â Pa, which is reason from more Zn atoms combined with O atoms in (111) orientation MgZnO crystal lattice in MgZnO thin film deposited at higher pressures. But when the growth pressure increased from 6Â Pa to 7Â Pa, the band gap value of MgZnO thin films increased because less Zn atoms than Mg atoms combined with O atoms in MgZnO crystal lattice at higher pressures with the same (111) orientation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 408, 15 December 2014, Pages 125-128
Journal: Journal of Crystal Growth - Volume 408, 15 December 2014, Pages 125-128
نویسندگان
Shun Han, Yukun Shao, Youming Lu, Peijiang Cao, Wenjun Liu, Yuxiang Zeng, Fang Jia, Deliang Zhu, Xiaocui Ma,