کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8151843 | 1524443 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
Linear and logarithmic step thickness grading for ternary (In0.194Ga0.806As), cation graded, and quaternary (In0.485Ga0.515As0.4P0.6), anion graded metamorphic buffers have been investigated. The group III ratio was kept fixed during the quaternary growths. Comparison between the samples showed that using a higher grading slope at the beginning of the growth and decreasing the grading slope as the growth progresses leads to improvement in the quality of the metamorphic buffers. However, owing to the existence of phase separation, the quaternary buffers showed poorer quality of the final metamorphic pseudo-substrate layers than for the ternary graded metamorphic buffers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 386, 15 January 2014, Pages 183-189
Journal: Journal of Crystal Growth - Volume 386, 15 January 2014, Pages 183-189
نویسندگان
Sudip Saha, Daniel T. Cassidy, D.A. Thompson,