کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8152026 | 1524448 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of Cu3Zn3Se ternary compounds by AP-MOCVD
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
I-II-VI Ternary chalcopyrite semiconductors of Cu1âxZn1âySe2âδ (Cu3Zn3Se) were successfully fabricated by the atmospheric pressure metal-organic chemical vapor deposition method for the first time. Four major peaks of (112), (220)/(204), (312)/(116), and (400), accompanied by three minor peaks of (103), (211) and (301) were observable in the X-ray diffraction spectra. In particular, the presence of those latter low-intensity peaks featured the formation of the chalcopyrite type Cu3Zn3Se compound. Typical absorption coefficients of the films produced were found to vary from 2.75Ã104cmâ1 to 5.75Ã104cmâ1 over all visible light range and from the same optical absorption spectra the energy gap of the material was extracted to be about 2.02 eV. Moreover, the photoluminescence measurement conducted at room temperature also exhibited a strong orange-colored emission line at 1.94 eV, which further confirmed that the Cu3Zn3Se ternary compound has been prepared. In addition, the cross-sectional and top-view scanning electron microscopy images characterized the fabricated Cu3Zn3Se compound as a polycrystalline film of thickness about 1-1.3 μm and consisting of 1-2.5 μm sized grains.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 381, 15 October 2013, Pages 144-147
Journal: Journal of Crystal Growth - Volume 381, 15 October 2013, Pages 144-147
نویسندگان
Tsung-Ming Chen, Shan-Ming Lan, Wu-Yih Uen, Tsun-Neng Yang, Kuo-Jen Chang, Chin-Chang Shen, Cheng-Fang Hsu, Jian-Chang Jhao,