کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8160146 | 1525103 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of mixed copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this study, simple ultrasound-assisted method was used for prepare the composite of (Cu-doped PVA) interfacial layer between metal and semiconductor (Al/p-Si). The scanning electron microscopy (SEM) images of the prepared (Cu-doped PVA) nanocomposites have shown an uniform fish scale shape, which are about 100â¯nm long and several tens of nm in width. Both the Al/p-Si (MS) and Al/(Cu-PVA)/p-Si (MPS) structures were fabricated on the same Si wafer to investigate the effect of this polymer layer on the electrical characteristics by using the current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) measurements at room temperature. The values of reverse-saturation current (Io), ideality factor (n) and zero-bias barrier height (ΦBo) were obtained from the liner part of the forward bias I-V plot as 6.6â¯Ãâ¯10â10 A, 3.67 and 0.84â¯eV for MS structure and 1.82â¯Ãâ¯10â8 A, 4.18 and 0.76â¯eV for MPS structure, respectively. MPS structure has a good rectifier behavior with low leakage current in comparison to the MS structure. The high values of n was attributed to the barrier inhomogeneity at Al/p-Si, special density distribution of Nss at (Cu-PVA)/p-Si interface and both the existence of native SiO2 and deposited of (Cu-doped PVA) interlayer at M/S interface. The energy dependent values of Nss were obtained from the forward bias I-V data and they ranged from the 1.85â¯Ãâ¯1013â¯eVâ1cmâ2 (0.60â¯eV -Ev) to 7.40â¯Ãâ¯1013â¯eVâ1cmâ2 (0.40â¯eV - Ev) for MS structure and 9.81â¯Ãâ¯1012â¯eVâ1cmâ2 (0.67â¯eV -Ev) to 5.26â¯Ãâ¯1013â¯eVâ1cmâ2 (0.47â¯eV -Ev) for the MPS structure. Experimental results show that the (Cu-PVA) interlayer can be successfully used instead of traditional insulator layer because of the saturation of dangling bonds.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 546, 1 October 2018, Pages 93-98
Journal: Physica B: Condensed Matter - Volume 546, 1 October 2018, Pages 93-98
نویسندگان
Ehsan Ahadi Akhlaghi, Yosef Badali, Semsettin Altindal, Yashar Azizian-Kalandaragh,