کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8160416 1525107 2018 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic and magnetic properties of defect complexes in Eu-doped GaN: First-principles calculations
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Electronic and magnetic properties of defect complexes in Eu-doped GaN: First-principles calculations
چکیده انگلیسی
Various forms of defect complexes are studied in Eu-doped GaN by first-principles calculations with the framework of density functional theory. We consider defect complexes formed by dopant Eu and vacancies or insterstitals with the neutral charge states in GaN, i.e., EuGa-VGa, EuGa-VN, EuGa-Ni, and EuGa-Oi, where EuGa represents the Eu site substituting for Ga site, and VGa, VN, Ni and Oi are Ga vacancies, N vacancies, interstitial N and interstitial O, respectively. The formation energies are calculated for all defect configurations. The formation energies of native Ga vacancies are found to be higher compared to those of N vacancies, while the tetrahedral interstitials are energetically more stable than the octahedral interstitial. The Eu-4f electrons introduce a magnetic moment of about 6.15 μB in the case of single dopant Eu, i.e., EuGa, which is probably suppressed in the presence of octahedral interstitial N around Eu. And Ga vacancies and octahedral interstitial O can contribute the magnetic moments to the systems, while other intrinsic defects do almost not promote the formation of local magnetic moments.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 542, 1 August 2018, Pages 1-5
نویسندگان
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