کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8160603 1525111 2018 25 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dielectric relaxation and magnetic properties of Ti and Zn co-doped GaFeO3
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Dielectric relaxation and magnetic properties of Ti and Zn co-doped GaFeO3
چکیده انگلیسی
polycrystalline GaFeO3 and Ga0.98Zn0.02Fe0.98Ti0.02O3 were prepared by solid state reaction. They showed an orthorhombic crystal structure with Pc21n space group. The magnetic transition temperature decrease due to the dilution of the magnetic interaction. A noteworthy effect of substitution of multiple elements at the Ga and Fe-sites on dielectric constant and tangent loss of GaFeO3 has been observed. Complete studies of temperature (180-400 K) and frequency (10-107 Hz) dependence of dielectric constant and impedance have provided the effect of grains and grain boundaries on the conduction mechanism and dielectric relaxation of the material. Impedance spectroscopy results in the temperature range 160-400 K have revealed a distinct conduction process at grain and grain boundaries.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 538, 1 June 2018, Pages 1-7
نویسندگان
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