Effect of silicon doping on electrical and optical properties of stoichiometric Cu2ZnSnS4 solar cells

To enhance the conversion efficiency of CZTS solar cells, both large grains with few defects and high carrier mobility are important. Here, For improving the grain sizes and hole mobility silicon (Si) was doped into the CZTS films. The influence of the Si doping concentration on the CZTS film macro- and microstructures is examined using X-ray diffraction and scanning electron microscopy. In addition, the optical and electrical properties of the CZTS thin films with different Si doping concentrations are examined. Finally, a 2.53% efficiency was obtained while the Si doping concertation is 0.65%.