کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8161450 | 1525117 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We characterized in-plane magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure grown by molecular beam epitaxy (MBE). We observed isotropic easy magnetization in two crystallographic in-plane directions, [2Ì
110] and [01Ì
10] of hexagonal MnAs i.e. [1Ì
10] and [112Ì
] of cubic InAs. We also fabricated transmission line model (TLM) devices, and observed almost isotropic electrical properties in two crystallographic in-plane directions, [1Ì
10] and [112Ì
] of cubic InAs. Also we tried to fabricate and characterize lateral spin-valve (LSV) devices from the hybrid structure. We could roughly estimate the spin injection efficiency and the spin diffusion length at room temperature in [112Ì
] direction. We believe that the hybrid structures are helpful to design spintronic device with good flexibility in-plane.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 532, 1 March 2018, Pages 95-98
Journal: Physica B: Condensed Matter - Volume 532, 1 March 2018, Pages 95-98
نویسندگان
Md. Earul Islam, Masashi Akabori,