کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8161452 1525117 2018 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Theoretical investigation of the breakdown electric field of SiC polymorphs
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Theoretical investigation of the breakdown electric field of SiC polymorphs
چکیده انگلیسی
The breakdown electric field of several SiC polymorphs has been investigated theoretically using a concept of “recovery rate,” which is obtained by first principles calculations. A good relationship between the experimental breakdown electric fields and the calculated recovery rate of 4H-, 6H-, and 3C-SiC was obtained. In order to examine the stability of SiC polymorphs, the total electronic energies of various types of SiC crystal structures were calculated. Here, two candidates of polymorphs-GeS-type- and 2H-SiC-with energies comparable to those of experimentally well-established structures, have been obtained. The breakdown electric fields of these two polymorphs were estimated using a relationship obtained from the results of 4H-, 6H-, and 3C-SiC. This indicates that one of these polymorphs, GeS-type-SiC, has higher breakdown electric field than any other SiC polymorphs. In addition to the investigation with the recovery rate, relationship between experimental breakdown electric field and calculated band gap with recently developed accurate electron-correlation potential has been also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 532, 1 March 2018, Pages 99-102
نویسندگان
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