Enhanced magneto-electric property of GaFeO3 in Ga(1−x)ZnxFeO3 (x=0, 0.05, 0.10)

Nanocrystalline samples of gallium orthoferrite (GaFeO3, GFO) and Zn doped GaFeO3 (Ga0.95Zn0.05FeO3, GZFO1 and Ga0.90Zn0.10FeO3, GZFO2) are prepared by sol-gel method. Crystallographic phase of each sample has been confirmed by analyzing the X-ray diffractogram using FULLPROF program and all the samples are grown in the distorted perovskite type structure. Magnetic measurements of all the samples are carried out in the temperature range of 300-4 K. Dielectric and ferroelectric measurements of the samples are also carried out at room temperature. Interestingly, the magnetization and electric polarization of the doped samples are enhanced compared to those of the pristine sample of GFO. The dielectric constant measured in presence and absence of a magnetic field confirmed that all the samples (GFO, GZFO1, and GZFO2) are type-II multiferroics and the magnetocapacitance is enhanced in the doped samples. The simultaneous enhancement of magnetization, polarization and magneto-capacitance co-efficient of the doped samples compared to that of GFO will be quite interesting for applications in electronic and memory devices.