کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8162904 | 1525212 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bias dependence of ionizing radiation damage in SiGe HBTs at different dose rates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The influences of three different bias conditions on the ionizing radiation damage at different dose rates were investigated in discrete silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). Experiment results demonstrated that the bias configuration corresponding to the worst performance degradation depended on the dose rate. For the high dose rate irradiation, the case with all terminals floating shown an enhanced degradation, while during the low dose rate irradiation, the forward active mode suffered more irradiation damage. The underlying physical mechanisms were analyzed and investigated in detail. It was indicated that the varied bias dependences for the high and low dose rate irradiation might be attributed to different origins of hole and proton induced by gamma irradiation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 434, 1 February 2014, Pages 95-100
Journal: Physica B: Condensed Matter - Volume 434, 1 February 2014, Pages 95-100
نویسندگان
Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu,