کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8163016 | 1525212 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature dependence of steady and time-resolved photoluminescence in Si quantum dots/SiO2 superlattices
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Superlattices of amorphous silicon rich oxide (a-SiOx) and silicon dioxide (SiO2) have been deposited by plasma enhanced chemical vapor deposition technique, and Si quantum dots (Si-QDs) are obtained in the a-SiOx layers by the following annealing treatment. Steady and time-resolved photoluminescence (PL) spectra at different temperatures are measured. Two broad PL bands located in the regions of 1.2-1.6Â eV and 2.1-3.1Â eV are obtained at low temperature, and they are defined as S band and F band, respectively. The PL decay time of the samples increases rapidly with decreasing temperature. Analyses show that the recombination dynamics of S band is related to the dispersive motion of excitons, and its PL lifetime is associated with an upper level singlet state and a lower level triplet state, while that of the F band is related to the recombination of oxygen related defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 434, 1 February 2014, Pages 177-180
Journal: Physica B: Condensed Matter - Volume 434, 1 February 2014, Pages 177-180
نویسندگان
Wei Yu, Huina Feng, Jin Wang, Wanlei Dai, Xiang Yu, Jiawei Zhang, Weidong Lai, Guangsheng Fu,