Effect of traps on the current impulse from X-ray induced conductivity in wide-gap semiconductors

This article presents a theoretical model for the calculation of the current impulse from X-ray induced conductivity in wide-gap semiconductors that contain different types of traps and recombination centres. The absorption of one X-ray photon in a semiconductor with ohmic contacts was investigated. The influence of the main parameters of the traps and recombination centres on the shape and amplitude of the current impulse was determined.