Frequency dependent capacitance and conductance properties of Schottky diode based on rubrene organic semiconductor

Al/rubrene/p-Si Schottky diode has been fabricated by forming a rubrene layer on p type Si by using the spin coating method. The frequency dependent capacitance-voltage (C-V-f) and conductance-voltage (G-V-f) characteristics of Al/rubrene/p-Si Schottky diyotes has been investigated in the frequency range of 5 kHz-500 kHz at room temperature. The C-V plots show a peak for each frequency. The capacitance of the device decreased with increasing frequency. The decrease in capacitance results from the presence of interface states. The plots of series resistance-voltage (Rs−V) gave a peak in the depletion region at all frequencies. The density of interface states (Nss) and relaxation time (τ) distribution profiles as a function of applied voltage bias have been determined from the C-V and G-V measurements. The values of the Nss and τ have been calculated in the ranges of 8.37×1011-4.85×1011 eV−1 cm−2 and 5.17×10−6-1.02×10−5 s, respectively.