The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current-voltage characteristics

The Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode has been fabricated by adding a layer of organic compound 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on top of the p-Si for which the junction characteristics have been investigated. The electronic properties of the device have been studied by the conventional I-V and the Norde's methods. For conventional I-V measurements the rectifying behavior has been observed with a rectification ratio of 236. The barrier height and ideality factor values of 0.81 eV and 3.5, respectively, for the structure have been obtained from the forward bias I-V characteristics. Various electrical parameters such as reverse saturation current, series resistance and shunt resistance have been calculated from the analysis of experimental I-V results and discussed in detail. The barrier height and the series resistance determined by the Norde's function are found in good agreement with the values calculated from conventional I-V measurements. The charge conduction mechanism has also been discussed.