Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell

In this study, potential efficiency of InGaN/Si mechanically stacked two-junction solar cell is theoretically investigated by optimizing the band gap and thickness of the top InGaN cell. Results show that the optimum conversion efficiency is 35.2% under AM 1.5 G spectral illuminations, with the bandgap and thickness of top InGaN solar cell are 2.0 eV and 600 nm, respectively. The results and discussion would be helpful in designing and fabricating high efficiency InGaN/Si mechanically stacked solar cell in experiment.