کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8164277 1525671 2017 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3
چکیده انگلیسی
We report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb0.25Bi2Se3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues CuxBi2Se3 and SrxBi2Se3 where smooth suppression of Tc is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi2Se3 family are believed to be single-band.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica C: Superconductivity and its Applications - Volume 543, 15 December 2017, Pages 58-61
نویسندگان
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