کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8252583 | 1533509 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface wet-ability modification of thin PECVD silicon nitride layers by 40Â keV argon ion treatments
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
تشعشع
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چکیده انگلیسی
Measurements of wet-ability of liquid drops have been performed on a 30Â nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40Â keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Radiation Physics and Chemistry - Volume 115, October 2015, Pages 49-54
Journal: Radiation Physics and Chemistry - Volume 115, October 2015, Pages 49-54
نویسندگان
F. Caridi, A. Picciotto, L. Vanzetti, E. Iacob, C. Scolaro,