EPR of γ-induced defects and their effects on the photoluminescence in the glasses of the Ag0.05Ga0.05Ge0.95S2-Er2S3 system

Paramagnetic defects in erbium-doped γ-irradiated chalcogenide glasses were investigated by EPR method. Vacancy nature of defects and the dependence of their concentration on the irradiation dose and erbium content were determined. The measurement of the static magnetization revealed the presence of paramagnetic and ferromagnetic subsystems caused by isolated Er3+ ions and ion clusters, respectively. PL spectra of 4f-4f transitions of Er3+ ions and the radiation mechanism of γ-irradiated glasses were investigated. It was determined that PL intensity depends on the number of radiation induced defects and on the nature of the distribution of erbium which were determined by EPR and magnetic susceptibility.