Effect of multiwalled carbon nanotubes incorporation on the performance of porous silicon photodetector

In this study, porous silicon photodetectors incorporated with multiwalled carbon nanotubes MWCNTs were investigated. Anodization technique was used to fabricate porous silicon photodetectors at 16 mA/cm2 for 15 min. The characteristics of porous silicon and MWCNTs were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR, photoluminescence PL, and scanning electron microscopy SEM, Dark and illuminated current-voltage I-V characteristics, capacitance-voltage characteristics C-V, spectral responsivity, specific detectivity, and minority carrier life time MCLT of photodetectors were investigated before and after incorporation. Significant improvement was noticed in photosensitivity and detectivity of the porous silicon photodetector after incorporating the MWCNTs into the porous matrix.