Characterization of GaN/p-Si solar cell prepared by simple technique

This study involves the synthesis of nanostructure GaN films on glass and Si substrates prepared by high vacuum thermal evaporation technique. Atomic force microscopy measurements reveal that the sample was found to have a smooth surface topography. X-ray diffraction showed high-quality GaN epilayer with a hexagonal shape. The optical properties were studied using micro-photoluminescence and UV–vis spectrophotometer. Micro-photoluminescence spectra displayed intensity enhancement with blue-shifted band-edge PL peaks associated with the increasing annealing temperature. The blue shifted in absorbencies spectroscopy for GaN films further confirms such behavior. The capacitance–voltage characteristics were measured, and it is found within the range of (Vbi = 0.86–1.4 V). I–V characteristic of GaN/Si (p-type) heterojunction are investigated. It is found that the maximum efficiency is (4.8) at annealing temperature Ta = 373 K while at Ta = 573 K is (8.8).