Dual-band absorption characteristics of one-dimensional photonic crystal with graphene-based defect

In this article, the dual-band absorption characteristics of one-dimensional photonic crystals with graphene-based defect were theoretically analyzed and numerically simulated using the transfer matrix method. The dependence of dual-band absorption characteristics of the one-dimensional photonic crystal with graphene-based defect on period number of the structure behind the graphene layer, graphene layers, dielectric thickness of defect layer and the incident angle was obtained. Simulation results show that the absorptions with the lights whose wavelength are 699 nm and 1000 nm approximately enhance with the increasing of the layers of graphene. The absorption peaks increase with the decreasing of the dielectric thickness of defect layer and move toward the shorter wavelength. In the transverse electric (TE) mode, the absorption peaks can be regularly tuned by varying the incident angle. The results provide the theoretical basis for the study of graphene absorbers.