کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
847346 909225 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dual-band absorption characteristics of one-dimensional photonic crystal with graphene-based defect
ترجمه فارسی عنوان
خصوصیات جذب دو باند یک کریستال فوتونیک یک بعدی با نقص مبتنی بر گرافن
کلمات کلیدی
گرافن، بلورهای فوتونی یک بعدی، روش ماتریس انتقال، ویژگی های جذب دو باند
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
چکیده انگلیسی

In this article, the dual-band absorption characteristics of one-dimensional photonic crystals with graphene-based defect were theoretically analyzed and numerically simulated using the transfer matrix method. The dependence of dual-band absorption characteristics of the one-dimensional photonic crystal with graphene-based defect on period number of the structure behind the graphene layer, graphene layers, dielectric thickness of defect layer and the incident angle was obtained. Simulation results show that the absorptions with the lights whose wavelength are 699 nm and 1000 nm approximately enhance with the increasing of the layers of graphene. The absorption peaks increase with the decreasing of the dielectric thickness of defect layer and move toward the shorter wavelength. In the transverse electric (TE) mode, the absorption peaks can be regularly tuned by varying the incident angle. The results provide the theoretical basis for the study of graphene absorbers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 127, Issue 9, May 2016, Pages 3945–3948
نویسندگان
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