کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8943403 | 1645145 | 2018 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Use of mist chemical vapor deposition to impart ferroelectric properties to ε-Ga2O3 thin films on SnO2/c-sapphire substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
ε-Ga2O3 has a polar crystal structure with non-inversion-symmetry along the direction of the c-axis. In a previous study, the ferroelectric hysteresis loop of ε-Ga2O3 was successfully measured using a planar-plate capacitor comprising a thick ε-Ga2O3 layer (3â¯Î¼m). Herein, we aim to enhance the ferroelectric properties of ε-Ga2O3 to allow ferroelectric measurements to be conducted with a lower maximum applied voltage and a higher measurement frequency as compared with previous studies. We successfully observed ferroelectric hysteresis loops of orthorhombic ε-Ga2O3 thin (250â¯nm) films grown on SnO2 conductive layers on c-sapphire substrates. Moreover, the smooth-surface morphology and improved crystal quality induced ferroelectric properties in the ε-Ga2O3 thin films grown at 750â¯Â°C. This material was used to facilitate ferroelectric measurements at a relatively high frequency of 1â¯kHz with a maximum applied electric field of 0.38â¯MV/cm and a small remnant polarization (2Prâ¯=â¯7.6â¯nC/cm2) at room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 232, 1 December 2018, Pages 47-50
Journal: Materials Letters - Volume 232, 1 December 2018, Pages 47-50
نویسندگان
Daisuke Tahara, Hiroyuki Nishinaka, Minoru Noda, Masahiro Yoshimoto,