کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8955815 | 1646111 | 2018 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Trace of increasing dot size in porous silicon systems of same thicknesses
ترجمه فارسی عنوان
ردیابی از افزایش اندازه نقطه در سیستم های سیلیکون متخلخل از همان ضخامت
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
The present work enables the understanding of the porous system of porous silicon (PS) in terms of growth of dots and wires (quantum Si nanostructures) under certain conditions. When it comes to optical properties, PS should be recognized in terms of growth of the dots and wires instead of its porosity as â¼2-5â¯nm sized Si-nanostructures are responsible for luminescence. In present work, the photoluminescence (PL) spectra of PS samples of thickness 1â¯Î¼m were used to estimate the percentage, average diameters and corresponding variances of dots and wires nanostructures by Singh and John (John-Singh) model. We have explicitly included the role of surface states on the fitting of John-Singh model. As a result, the plotted analytical curve revealed that an increase of current density, for fabricating the same thickness of the PS systems, results in the homogeneous formation of relatively thinner wires with a simultaneous growth of dots. It is a useful clue towards the fabrication of silicon quantum dots for photonic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 501, 1 November 2018, Pages 43-48
Journal: Journal of Crystal Growth - Volume 501, 1 November 2018, Pages 43-48
نویسندگان
Fateh Singh Gill, Varij Panwar, Neeraj Dhiman, Sakshi Juyal, R. Kumar, R.M. Mehra, Yogesh Kumar,