کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9566713 | 1388367 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Factors affecting phase and height contrast of diblock copolymer PS-b-PEO thin films in dynamic force mode atomic force microscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Factors affecting phase and height contrast of diblock copolymer PS-b-PEO thin films in dynamic force mode atomic force microscopy Factors affecting phase and height contrast of diblock copolymer PS-b-PEO thin films in dynamic force mode atomic force microscopy](/preview/png/9566713.png)
چکیده انگلیسی
Asymmetric PS-b-PEO block copolymer exhibits well-ordered cylindrical morphology with nanoscale domain sizes due to microphase separation. Since the PS and PEO blocks have large stiffness difference, this polymer system represents an ideal candidate for studies of the phase contrast behavior in atomic force microscopy (AFM). In this paper, PS-b-PEO films are investigated under different scanning conditions using two different atomic force microscopes. It is found that the phase contrast of the film can be well described in terms of energy dissipation, though the exact phase image may also depend on the scanning parameters (e.g., the repulsive versus attractive regimes) as well as the settings of the microscope. Height variation on sample surface does not have significant effect on phase contrast. However, in order to obtain true topography of the polymer film, care has to be taken to avoid damage to the sample by AFM. Under certain conditions, true topography can be obtained during the first scan in spite of the surface-damaging forces are used.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 4, 15 November 2005, Pages 1092-1100
Journal: Applied Surface Science - Volume 252, Issue 4, 15 November 2005, Pages 1092-1100
نویسندگان
H. Wang, A.B. DjuriÅ¡iÄ, W.K. Chan, M.H. Xie,