Pulsed laser deposition of HfO2 and PrxOy high-k films on Si(100)

Raman spectra of the films show relatively sharp phonon peaks, a single one for PrxOy and a rich spectrum for HfO2, clearly evidencing crystalline areas. This is corroborated by substrate Raman spectra which indicate a stressed interface, pointing to epitaxial PrxOy and HfO2 film growth, respectively, during the initial stages of growth.