کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9567351 1503713 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Control of Zn composition (0 < x < 1) in Cd1−xZnxTe epitaxial layers on GaAs substrates grown by MOVPE
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Control of Zn composition (0 < x < 1) in Cd1−xZnxTe epitaxial layers on GaAs substrates grown by MOVPE
چکیده انگلیسی
Cd1−xZnxTe epitaxial layers over the entire composition range (x from 0 to 1) were grown on (1 0 0) GaAs substrates by atmospheric pressure metalorganic vapor phase epitaxy. A growth temperature of 560 °C, and the group VI/II precursor flow rate ratio of 2 or larger enabled us to control the Zn composition strictly on the grown epilayers. Epitaxial layers with high crystal quality were obtained in a wide range of Zn composition. The double crystal rocking curves (DCRC) full-width at half maximum (FWHM) values were between 260 and 670 arcsec at the end points of alloy range. The low-temperature PL measurements showed distinct bound-exciton emissions and weak deep-level emissions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 244, Issues 1–4, 15 May 2005, Pages 347-350
نویسندگان
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