کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9567549 | 1503718 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of epitaxial Al2O3/NiAl(1Â 1Â 0) films: aluminium deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation of epitaxial Al2O3/NiAl(1Â 1Â 0) films: aluminium deposition Formation of epitaxial Al2O3/NiAl(1Â 1Â 0) films: aluminium deposition](/preview/png/9567549.png)
چکیده انگلیسی
Structure of epitaxial Al2O3 layers formed on NiAl(1Â 1Â 0) substrates has been studied by means of reflection high-energy electron diffraction (RHEED). The elucidated structure was compared to the model suggested for 0.5Â nm-thick Al2O3 layers [K. Müller, H. Lindner, D.M. Zehner, G. Ownby, Verh. Dtsch. Phys. Ges. 25 (1990) 1130; R.M. Jaeger, H. Kuhlenbeck, H.J. Freund, Surf. Sci. 259 (1991) 235]. The stepwise growth of Al2O3 film, involving deposition and subsequent oxidation of aluminium onto epitaxial 0.5Â nm-thick Al2O3 layers, has been investigated. Aluminium was deposited at room temperature, whereas its oxidation took place during annealing at 1070Â K. The Al2O3 thickness was monitored by means of Auger electron spectroscopy (AES). It was found that Al2O3 layer follows the structure of 0.5Â nm thick Al2O3 film, although a tilting of Al2O3(1Â 1Â 1) surface plane with respect to NiAl(1Â 1Â 0) surface appeared after Al deposition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 241, Issues 1â2, 28 February 2005, Pages 250-255
Journal: Applied Surface Science - Volume 241, Issues 1â2, 28 February 2005, Pages 250-255
نویسندگان
Y. Lykhach, V. Moroz, M. Yoshitake,