Range evaluation in SIMS depth profiles of Er-implantations in silicon

Equal doses of Er has been implanted into SIMOX wafers with energies of 100, 200, 300, 400, 500, and 600 keV. Profiles have been measured with secondary ion mass spectrometry (SIMS). Relative sensitivity factors (RSF) were gathered from low-energy implantations, remaining within the Si top layer. We used the Si/SiO2 interface at exactly 217.7 nm to calibrate the depth scale of all profiles. In addition dynamical Monte-Carlo simulations of the sputter process were taken to correct the depth scale and the interface position.