کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9594471 | 1507963 | 2005 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radical-enhanced atomic layer deposition of Y2O3 via a β-diketonate precursor and O radicals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin films of Y2O3 were deposited on Si(1 0 0) by radical-enhanced atomic layer deposition (ALD), using Y(TMHD)3 and O radicals. First, the self-limiting mechanism of this process was investigated in situ from 473 to 573 K, using a quartz crystal microbalance. Specifically, adsorption of Y(TMHD)3 can only be initiated after reactive sites are created on the surface by the exposure to O radicals. However, due to the bulky β-diketonate ligands, only a sub-monolayer of metal oxide was achieved after these ligands were removed by a subsequent O radical exposure. These alternating reactions were found to be self-limiting and temperature insensitive from 473 to 573 K. A reactant pulse time of 7 min was required for both Y(TMHD)3 and O radicals to achieve saturation, yielding a maximum deposition rate of 0.5 Ã
/cycle in the ALD temperature window from 473 to 573Â K. A lower deposition rate of 0.3Â Ã
/cycle was obtained when both reactant pulse times were reduced to 30Â s. X-ray photoelectron spectroscopy analysis suggests the formation of a thin yttrium silicate interfacial layer between Y2O3 and Si. The compositional analysis indicates stoichiometric Y2O3 films were deposited, with the carbon content decreased from 24Â at.% at 473Â K to 4Â at.% at 623Â K. The atomic force microscopy images revealed fairly smooth surfaces of films deposited at 573Â K, showing a small root mean square roughness of 5Â Ã
for a 115-Ã
Y2O3 film. Excellent conformal deposition of an 800-Ã
Y2O3 film over 0.5 μm features with an aspect ratio of 2 was accomplished. These results demonstrate that radical-enhanced ALD is a viable technique for conformal low-temperature deposition of stoichiometric and smooth metal oxide thin films with minimal carbon contamination.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 596, Issues 1â3, 10 December 2005, Pages 1-11
Journal: Surface Science - Volume 596, Issues 1â3, 10 December 2005, Pages 1-11
نویسندگان
Trinh Tu Van, Jane P. Chang,