Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques

We make a comparative study of the luminescent properties of InGaP films grown on GaAs substrates by two different growth techniques: liquid phase epitaxy (LPE) and metal-organic vapor phase epitaxy (MOVPE). The grown InxGa1−xP (x≈0.5) films were nearly lattice matched to GaAs and had the same thickness of approximately 0.5 μm. Photoluminescence (PL) measurements were performed in a wide temperature (10-300 K) range for polarization of the emitted radiation along the [011] and [01¯1] directions. Observations suggest that the InxGa1−xP layers in the structures grown by MOVPE present ordering, while in the layers grown by LPE no ordering was observed.