Direct electrical measurement of the electron g factor in ultra-thin InGaAs/InP single quantum wells

The Landé g factor has been measured for electrons in ultra-thin InGaAs/InP quantum wells by means of an electrically-detected electron spin resonance (EDESR) technique. These experiments, carried out in a range of applied magnetic fields, allowed direct, unambiguous determination of both the absolute value and sign of the normal component of the electron g factor, g∥ (g parallel to the structure growth axis and the magnetic field). We observed a linear magnetic field dependence to the g factor, in agreement with the expression g∥(B,N)=g∥0+c(N+1/2)B, where N is the Landau level index.