کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9697399 | 1460824 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of sulfur, boron, nitrogen and phosphorus additions during low-pressure diamond deposition
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The doping of diamond is still an interesting topic for the production of microelectronic devices. During the last years several doping elements were investigated to produce p- but also n-type diamond. The mainly investigated doping elements are boron, nitrogen, phosphorus and sulfur. Diamond deposition experiments showed that different elements influence diamond deposition (nucleation and growth) and diamond properties very differently. Thermodynamic calculations of the gas phase chemistry help to understand the mechanism taking place during the deposition. The diamond deposition results and thermodynamic data for the various doping elements will be compared.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issues 3â7, MarchâJuly 2005, Pages 355-363
Journal: Diamond and Related Materials - Volume 14, Issues 3â7, MarchâJuly 2005, Pages 355-363
نویسندگان
R. Haubner,