Kelvin force microscopy on diamond surfaces and devices

The results, resolution and accuracy of Kelvin force microscopy (KFM) on highly conductive (hydrogenated) and highly resistive (oxidized) diamond surfaces are discussed in detail. Electronic properties of the interface between hydrogen and oxygen terminated surface regions are investigated using KFM profiles across in-plane gate transistor structures. Measurements under sub-band gap illumination are interpreted in terms of a surface photovoltage effect and are used to deduce information about surface and interface states.