کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9697438 | 1460824 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of oxygen on the cathodoluminescence signal from excitons, impurities and structural defects in homoepitaxial (100) diamond films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Cathodoluminescence at 5 K is used to study the residual radiative defects in homoepitaxial diamond films deposited on the centre of the plasma ball versus the O/CH4 ratio from 0 to 0.375 in the feeding gas, and to understand their effect on the quality (intensity of the free exciton peaks) of the films. The addition of oxygen significantly reduces the slight boron contamination (1.6Ã1016 to 4Ã1014 cmâ3) of these good quality (BENP exciton peak) non-intentionally doped films. As the O/C ratio increases, (i) the intensities of the boron-bound excitons, Nc-Vc, H3, Nc-Ic peaks, of the 2.3 eV wide band and the nitrogen contamination decrease (ii) the intensity of the N3 peak and the relative intensity of the A band increase. These opposite variations of the defects concentration as O/C increases result in a maximum of the FE peaks for O/C around 0.25.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issues 3â7, MarchâJuly 2005, Pages 566-569
Journal: Diamond and Related Materials - Volume 14, Issues 3â7, MarchâJuly 2005, Pages 566-569
نویسندگان
M. Kadri, D. Araujo, M. Wade, A. Deneuville, E. Bustarret,