کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9703875 | 1463865 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A genetic algorithm for unified approach-based predictive modeling of fatigue crack growth
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی مکانیک
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چکیده انگلیسی
The unified approach enunciates that two parameters-namely, the stress intensity amplitude ÎK and the peak stress intensity Kmax-drive fatigue crack growth. It captures and explicates the various fatigue phenomena coherently. However, its application for damage prediction is still in its infancy. Mathematical models that are consistent with the approach and the various observed characteristics under various environments are imperative for fatigue damage life prediction. These models will reduce cumbersome experimentation that is usually needed for the fatigue crack growth analysis. The framework presented in this paper consists of using the unified approach to design the structure of a model that relates fatigue crack growth with the specified microstructure, applied stress and environmental conditions. The fatigue growth model is derived by parametrizing, using a genetic algorithm, these structural relationships from the known experimental data. This model can quantitatively estimate crack growth rate under the given combination of microstructure, applied stress and environmental conditions. The initial research on modeling fatigue crack growth dynamics in Al-5052 under vacuum and air has revealed that the models resulting from the framework can capture the actual crack growth pattern to within 12% accuracy, and that an automatic rendering of ÎK* vs. Kmax* trajectories is possible for a given material and environmental conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Fatigue - Volume 27, Issues 10â12, OctoberâDecember 2005, Pages 1354-1359
Journal: International Journal of Fatigue - Volume 27, Issues 10â12, OctoberâDecember 2005, Pages 1354-1359
نویسندگان
Satish T.S. Bukkapatnam, K. Sadananda,