کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9775258 | 1509193 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Experimental and theoretical study of the influence of growth temperature on composition in self-assembled SiGe QD's
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
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چکیده انگلیسی
A detailed study of self-induced SiGe nanoislands on Si substrate formed at different substrate temperatures is presented. As a result of AFM investigations, the dependencies of the density, volume and shape of the islands on the growth temperature are established. Using Raman spectroscopy and HRXRD, the dependences of average values of strain and composition in the islands on the growth temperature are determined. Based on the experimental results and theoretical calculations, the dependence of SiGe island volume on Si content is established.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 25, Issues 5â8, December 2005, Pages 565-569
Journal: Materials Science and Engineering: C - Volume 25, Issues 5â8, December 2005, Pages 565-569
نویسندگان
A.M. Yaremko, V.O. Yukhymchuk, M.Ya. Valakh, A.V. Novikov, V.P. Melnik, O.S. Lytvyn, D.N. Lobanov, Z.F. Krasil'nik, V.P. Klad'ko, V.M. Dzhagan,