کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9775303 | 1509193 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of structure and defects in dot-in-well laser structures
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Initial attempts at multilayer QD structures showed substantial degradation in optical and electrical properties compared to single layer structures. Analysis by Transmission Electron Microscopy (TEM) has identified the presence of defects arising from the complex interaction of QDs, which propagate through the QD layers into the upper regions of the structure as being the primary cause of the poor electronic device characteristics. The use of high growth temperature spacing layers (HGTSLs) have recently allowed us the fabrication of a defect free five layer-stacked structure with record low threshold current density.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 25, Issues 5â8, December 2005, Pages 793-797
Journal: Materials Science and Engineering: C - Volume 25, Issues 5â8, December 2005, Pages 793-797
نویسندگان
M. Gutiérrez, M. Hopkinson, H.Y. Liu, M. Herrera, D. González, R. GarcÃa,