کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9801329 | 1515479 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Positive magnetoresistance in heterostructure composed of two oxides
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Positive magnetoresistance in heterostructure composed of two oxides Positive magnetoresistance in heterostructure composed of two oxides](/preview/png/9801329.png)
چکیده انگلیسی
A positive magnetoresistance (MR) has been discovered in the epitaxial p-n heterostructure we fabricated with Sr-doped LaMnO3 and Nb-doped SrTiO3 by laser molecular-beam epitaxy. The MR dependence on the bias voltage has been displayed at the temperature of 130 and 190Â K. The mechanism causing the unusual positive MR is proposed as the creation of the region near the interface with electron filling in the t2g spin-down band in La0.9Sr0.1MnO3. Other puzzling MR features with bias voltage, temperature are well explained by the present scenario.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Science and Technology of Advanced Materials - Volume 6, Issue 7, October 2005, Pages 833-836
Journal: Science and Technology of Advanced Materials - Volume 6, Issue 7, October 2005, Pages 833-836
نویسندگان
Kui-juan Jin, Hui-bin Lu, Qing-li Zhou, Kun Zhao, Zheng-hao Chen, Bo-lin Cheng, Guo-Zhen Yang,