کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9803329 | 1516465 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystal structures of the compounds RCuS2 (RÂ =Â Dy, Ho, Yb, Lu) and Tm0.97Cu1.10S2
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Crystal structures of the compounds RCuS2 (RÂ =Â Dy, Ho, Yb, Lu) and Tm0.97Cu1.10S2 Crystal structures of the compounds RCuS2 (RÂ =Â Dy, Ho, Yb, Lu) and Tm0.97Cu1.10S2](/preview/png/9803329.png)
چکیده انگلیسی
The crystal structures of the compounds RCuS2 (R = Dy, Ho, Yb, Lu) and Tm0.97Cu1.10S2 (space group P212121) were investigated using X-ray powder diffraction: a = 0.62532(6) nm, b = 1.3375(1) nm, c = 0.39641(1) nm, Pearson symbol oP16, RI = 0.0765 (for DuCuS2); a = 0.62497(3) nm, b = 1.33282(5) nm, c = 0.39525(1) nm, Pearson symbol oP16, RI = 0.0743 (for HoCuS2); a = 0.62171(3) nm, b = 1.31388(5) nm, c = 0.39062(1) nm, Pearson symbol oP16, RI = 0.0768 (for YbCuS2); a = 0.62395(9) nm, b = 1.3146(2) nm, c = 0.39060(4) nm, Pearson symbol oP16 (for LuCuS2) and a = 0.62255(4) nm, b = 1.31934(7) nm, c = 0.39195(2) nm, Pearson symbol oP16.27, RI = 0.0812 (for Tm0.97Cu1.10S2). The S atoms of the compounds RCuS2 (R = Dy, Ho, Yb, Lu) and Tm0.97Cu1.10S2 are stacked in a close-packed arrangement with layers in the sequence AB. Half of the octahedral interstices are occupied by R (or Tm) atoms in the structures of all compounds. The remaining octahedral interstices are occupied by Cu2 atoms only in the structure of the Tm0.97Cu1.10S2 compound. The Cu and Cu1 atoms are located in one quart of the tetrahedral interstices of the RCuS2 (R = Dy, Ho, Yb, Lu) and Tm0.97Cu1.10S2 compounds, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 402, Issues 1â2, 27 October 2005, Pages 89-94
Journal: Journal of Alloys and Compounds - Volume 402, Issues 1â2, 27 October 2005, Pages 89-94
نویسندگان
L.D. Gulay, I.D. Olekseyuk,