کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9803716 | 1516472 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Cu doping and pressure effect on a layered palladium oxide: PbPdO2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Cu doping and pressure effect on a layered palladium oxide: PbPdO2 Cu doping and pressure effect on a layered palladium oxide: PbPdO2](/preview/png/9803716.png)
چکیده انگلیسی
Effects of Cu doping and pressures on the physical properties of PbPdO2 have been investigated. Single-phase samples of PbPd1âxCuxO2 (0 â¤Â x â¤Â 0.04) have been synthesized via solid-state reaction and their temperature-dependent electrical resistivity and thermoelectric properties have been characterized. The temperature-dependent electrical resistivity exhibits a metal-insulator transition around 90-140 K for all compositions. The sign of the thermoelectric power is positive for all compositions indicating that the majority of carriers in PbPd1âxCuxO2 (0 â¤Â x â¤Â 0.04) are holes. Both the electrical resistivity and the thermoelectric power increase as the Cu content increases. The largest power factor in this system is 0.022 μW/K2 cm at x = 0.03. The electrical resistivity of PbPdO2 decreases as the applied pressure increases. In addition, the metal-insulator transition is suppressed as the applied pressure increases.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 395, Issues 1â2, 31 May 2005, Pages 32-35
Journal: Journal of Alloys and Compounds - Volume 395, Issues 1â2, 31 May 2005, Pages 32-35
نویسندگان
T.C. Ozawa, T. Taniguchi, Y. Nagata, Y. Noro, T. Naka, A. Matsushita,